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Part #: VQ1001P-1
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
VQ1001P-1 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.8300000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.0000000000000000 |
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VQ1001P-1 Datasheet & Equivalents - VISHAY SILICONIX - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #VQ1001P-1
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