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Part #: NE961R200
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Description:RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
NE961R200 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 9.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.3500000000000000 |
| FET Technology | METAL SEMICONDUCTOR |
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