Part #: NDT014LS62Z
Part Category: Transistors
Manufacturer: Fairchild Semiconductor
Description: Power Field-Effect Transistor, 2.8A I(D), 60V, 0.2ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
Manufacturer: Fairchild Semiconductor
Description: Power Field-Effect Transistor, 2.8A I(D), 60V, 0.2ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
NDT014LS62Z SPECIFICATIONS
| Status | Discontinued |
| Drain Current-Max (ID) | 2.8 A |
| Drain-source On Resistance-Max | 0.2 ohm |
| DS Breakdown Voltage-Min | 60.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-261 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
