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Part #: FTD2017C
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SANYO SEMICONDUCTOR CO LTD
Description:Power Field-Effect Transistor, 6A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FTD2017C SPECIFICATIONS
| Status | Transferred |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0240000000000000 |
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Equivalent Parts: Part #FTD2017C
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