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Part #: FSF254R1
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 18A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
FSF254R1 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
| Drain Current-Max (ID) (A) | 18.0000000000000000 |
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FSF254R1 Datasheet & Equivalents - HARRIS SEMICONDUCTOR - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FSF254R1
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