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Part #: FQB65N06TM
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB65N06TM SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 650.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
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Equivalent Parts: Part #FQB65N06TM
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