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Part #: FPD2250SOT89
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:QORVO INC
Description:RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET
FPD2250SOT89 SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 8.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
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Equivalent Parts: Part #FPD2250SOT89
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