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Part #: FPD1000ASSB
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:RF MICRO DEVICES INC
Description:RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
FPD1000ASSB SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | L BAND |
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