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Part #: FDC021N30
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 6.1A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
FDC021N30 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.1000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0260000000000000 |
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