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Part #: F2H3ND
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Description:Power Field-Effect Transistor, 2.5A I(D), 30V, 0.25ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
F2H3ND SPECIFICATIONS
| Status | Discontinued |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2500000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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