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Part #: BL065N08THD
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 112A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-252
BL065N08THD SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | TUBE: 80 |
| Avalanche Energy Rating (Eas) (mJ) | 552.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 80.0000000000000000 |
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