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Part #: BCF030T
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:BEREX CORP
Description:RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Hetero-junction FET
BCF030T SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 8.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.1200000000000000 |
| FET Technology | HETERO-JUNCTION |
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