Part #: YTS2907A
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236
Manufacturer: Toshiba America Electronic Components, Inc.
Description: RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236
YTS2907A SPECIFICATIONS
Status | Active-Unconfirmed |
Collector-base Capacitance-Max | 8.0 pF |
Collector Current-Max (IC) | 0.6 A |
Collector-emitter Voltage-Max | 60.0 V |
Configuration | SINGLE |
DC Current Gain-Min (hFE) | 50.0 |
Highest Frequency Band | VERY HIGH FREQUENCY BAND |
JEDEC-95 Code | TO-236 |
JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e0 |
Number of Elements | 1.0 |
Number of Terminals | 3 |
Operating Temperature-Max | 150.0 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Polarity/Channel Type | PNP |
Power Dissipation-Max (Abs) | 0.36 W |
Qualification Status | Not Qualified |
Sub Category | Other Transistors |
Surface Mount | YES |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 200.0 MHz |
Turn-off Time-Max (toff) | 100.0 ns |
Turn-on Time-Max (ton) | 45.0 ns |
VCEsat-Max | 1.6 V |