Part #: YTS2907A

Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236
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YTS2907A SPECIFICATIONS

Status Active-Unconfirmed
Collector-base Capacitance-Max 8.0  pF
Collector Current-Max (IC) 0.6  A
Collector-emitter Voltage-Max 60.0  V
Configuration SINGLE
DC Current Gain-Min (hFE) 50.0
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1.0
Number of Terminals 3
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.36  W
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200.0  MHz
Turn-off Time-Max (toff) 100.0  ns
Turn-on Time-Max (ton) 45.0  ns
VCEsat-Max 1.6  V