Part #: W3E32M64S-266BM

Part Category: Memory ICs
Manufacturer: Microsemi Corp.
Description: DDR DRAM, 32MX64, 0.75ns, CMOS, PBGA219

SPECIFICATIONS

Mfr Package Description 25 X 25 MM, PLASTIC, BGA-219
Status Transferred
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75  ns
JESD-30 Code S-PBGA-B219
JESD-609 Code e0
Memory Density 2.147483648E9  bit
Memory IC Type DDR DRAM
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 219
Number of Words 3.3554432E7  words
Number of Words Code 32M
Operating Mode SYNCHRONOUS
Operating Temperature-Min -55.0  Cel
Operating Temperature-Max 125.0  Cel
Organization 32MX64
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Shape SQUARE
Package Style GRID ARRAY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Self Refresh YES
Supply Voltage-Nom (Vsup) 2.5  V
Supply Voltage-Min (Vsup) 2.3  V
Supply Voltage-Max (Vsup) 2.7  V
Surface Mount YES
Technology CMOS
Temperature Grade MILITARY
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Additional Feature AUTO/SELF REFRESH