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Part #: STD17N25
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
STD17N25 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
| Drain Current-Max (ID) (A) | 17.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1650000000000000 |
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STD17N25 Datasheet & Equivalents - STMICROELECTRONICS - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #STD17N25
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