Part #: NX2301P

Part Category: Transistors
Manufacturer: Nexperia
Description: Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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NX2301P SPECIFICATIONS

Mfr Package Description PLASTIC PACKAGE-3
REACH Compliant Yes
EU RoHS Compliant Yes
China RoHS Compliant Yes
Status NRFND
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 2.0  A
Drain-source On Resistance-Max 0.27  ohm
DS Breakdown Voltage-Min 20.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON