Part #: NT5CB64M16FP-DH
Part Category: Memory ICs
Manufacturer: Nanya Technology Corporation
Description: DDR3 DRAM, 64MX16, 0.225ns, CMOS, PBGA96
Manufacturer: Nanya Technology Corporation
Description: DDR3 DRAM, 64MX16, 0.225ns, CMOS, PBGA96
NT5CB64M16FP-DH SPECIFICATIONS
| Mfr Package Description | TFBGA-96 |
| REACH Compliant | Yes |
| EU RoHS Compliant | Yes |
| Status | Discontinued |
| Sub Category | DRAMs |
| Access Mode | MULTI BANK PAGE BURST |
| Access Time-Max | 0.225 ns |
| Clock Frequency-Max (fCLK) | 800.0 MHz |
| Interleaved Burst Length | 8 |
| I/O Type | COMMON |
| JESD-30 Code | R-PBGA-B96 |
| Memory Density | 1.073741824E9 bit |
| Memory IC Type | DDR3 DRAM |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 96 |
| Number of Words | 6.7108864E7 words |
| Number of Words Code | 64M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Min | 0.0 Cel |
| Operating Temperature-Max | 85.0 Cel |
| Organization | 64MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TFBGA |
| Package Equivalence Code | BGA96,9X16,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Refresh Cycles | 8192.0 |
| Seated Height-Max | 1.2 mm |
| Self Refresh | YES |
| Sequential Burst Length | 8 |
| Standby Current-Max | 0.011 Amp |
| Supply Current-Max | 0.2 Amp |
| Supply Voltage-Nom (Vsup) | 1.5 V |
| Supply Voltage-Min (Vsup) | 1.425 V |
| Supply Voltage-Max (Vsup) | 1.575 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Form | BALL |
| Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Length | 13.0 mm |
| Width | 9.0 mm |
| Additional Feature | AUTO/SELF REFRESH |
