Part #: NP90N06VLG-E1-AY

Part Category: Transistors
Manufacturer: Renesas Electronics
Description: Power Field-Effect Transistor, 90A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

SPECIFICATIONS

Mfr Package Description LEAD FREE, MP-3ZP, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
China RoHS Compliant Yes
Status NRFND
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 90.0  A
Drain Current-Max (ID) 90.0  A
Drain-source On Resistance-Max 0.0078  ohm
DS Breakdown Voltage-Min 60.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1.0
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 105.0  W
Pulsed Drain Current-Max (IDM) 180.0  A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature LOGIC LEVEL COMPATIBLE