Part #: NP90N03VUG-E1-AY
Part Category: Transistors
Manufacturer: Renesas Electronics
Description: Power Field-Effect Transistor, 90A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Manufacturer: Renesas Electronics
Description: Power Field-Effect Transistor, 90A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
SPECIFICATIONS
| Mfr Package Description | LEAD FREE, MP-3ZP, 3 PIN |
| EU RoHS Compliant | Yes |
| China RoHS Compliant | Yes |
| Status | Discontinued |
| Avalanche Energy Rating (Eas) | 168.0 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 90.0 A |
| Drain Current-Max (ID) | 90.0 A |
| Drain-source On Resistance-Max | 0.0032 ohm |
| DS Breakdown Voltage-Min | 30.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1.0 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 105.0 W |
| Pulsed Drain Current-Max (IDM) | 360.0 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
