Part #: NP90N03VUG-E1-AY

Part Category: Transistors
Manufacturer: NEC Corporation
Description: Power Field-Effect Transistor, 90A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

SPECIFICATIONS

Mfr Package Description LEAD FREE, MP-3ZP, 3 PIN
Status Transferred
Avalanche Energy Rating (Eas) 168.0  mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 90.0  A
Drain-source On Resistance-Max 0.0032  ohm
DS Breakdown Voltage-Min 30.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1.0
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 360.0  A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON