Part #: NDT454P
Part Category: Transistors
Manufacturer: ON Semiconductor L.L.C.
Description: Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Manufacturer: ON Semiconductor L.L.C.
Description: Power Field-Effect Transistor, 5.9A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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NDT454P SPECIFICATIONS
REACH Compliant | Yes |
EU RoHS Compliant | Yes |
Status | Discontinued |
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Drain Current-Max (Abs) (ID) | 5.9 A |
Drain Current-Max (ID) | 5.9 A |
Drain-source On Resistance-Max | 0.05 ohm |
DS Breakdown Voltage-Min | 30.0 V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G4 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1.0 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150.0 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 3.0 W |
Pulsed Drain Current-Max (IDM) | 15.0 A |
Qualification Status | Not Qualified |
Sub Category | Other Transistors |
Surface Mount | YES |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
NDT454P FEATURED EQUIVALENT PARTS
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Equivalent Part | Manufacturer | Replacement Type [?]
Replacement TypesDrop-In Replacement: Same function, same pinout, parametrically equivalent or better to the compared device. Same Functionality: Same function, but different pinout and parameters to the compared device. ![]() |
Status | ||
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NDT452AP/J23Z | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
NDT452AP/L99Z | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261 |
|
NDT452AP/D84Z | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261 |
|
NDT452AP/S62Z | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261 |