Part #: NDT452AP/D84Z

Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
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NDT452AP/D84Z SPECIFICATIONS

Status Discontinued
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 5.0  A
Drain-source On Resistance-Max 0.065  ohm
DS Breakdown Voltage-Min 30.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261
JESD-30 Code R-PDSO-G4
Number of Elements 1.0
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.1  W
Pulsed Drain Current-Max (IDM) 15.0  A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 90.0  ns
Turn-on Time-Max (ton) 50.0  ns

NDT452AP/D84Z FEATURED EQUIVALENT PARTS


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Replacement Types

Drop-In Replacement: Same function, same pinout, parametrically equivalent or better to the compared device.

Same Functionality: Same function, but different pinout and parameters to the compared device.

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Status
NDT452AP/J23Z Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Same Functionality Status: DISCONTINUED

Description:

Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NDT452AP/L99Z Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Same Functionality Status: DISCONTINUED

Description:

Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
NDT452AP/S62Z Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Same Functionality Status: DISCONTINUED

Description:

Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261