Part #: NDT410EL/J23Z
Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Find Equivalent Parts
NDT410EL/J23Z SPECIFICATIONS
| REACH Compliant | Yes |
| Status | Discontinued |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 2.1 A |
| Drain Current-Max (ID) | 2.1 A |
| Drain-source On Resistance-Max | 0.25 ohm |
| DS Breakdown Voltage-Min | 100.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e0 |
| Number of Elements | 1.0 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 3.0 W |
| Pulsed Drain Current-Max (IDM) | 10.0 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
NDT410EL/J23Z FEATURED EQUIVALENT PARTS
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| Equivalent Part | Manufacturer | Replacement Type [?]
Replacement TypesDrop-In Replacement: Same function, same pinout, parametrically equivalent or better to the compared device. Same Functionality: Same function, but different pinout and parameters to the compared device. 
|
Status | ||
|---|---|---|---|---|---|
| NDT451N/L99Z | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 5.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261 |
|
| NDT451N/J23Z | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 5.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
| NDT3055L/J23Z | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 3.7A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
| NDT3055L/L99Z | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 3.7A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261 |