Part #: NDT3055L
Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 3.7A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 3.7A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
NDT3055L SPECIFICATIONS
| REACH Compliant | Yes |
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 3.7 A |
| Drain Current-Max (ID) | 3.7 A |
| Drain-source On Resistance-Max | 0.12 ohm |
| DS Breakdown Voltage-Min | 60.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-261 |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e0 |
| Number of Elements | 1.0 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 1.1 W |
| Power Dissipation-Max (Abs) | 3.0 W |
| Pulsed Drain Current-Max (IDM) | 25.0 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 70.0 ns |
| Turn-on Time-Max (ton) | 40.0 ns |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
