Part #: NDT2955L99Z
Part Category: Transistors
Manufacturer: Fairchild Semiconductor
Description: Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Fairchild Semiconductor
Description: Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NDT2955L99Z SPECIFICATIONS
| Status | Discontinued |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 2.5 A |
| Drain-source On Resistance-Max | 0.3 ohm |
| DS Breakdown Voltage-Min | 60.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1.0 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 15.0 A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
