Part #: NDT02N40T1G
Part Category: Transistors
Manufacturer: ON Semiconductor L.L.C.
Description: Power Field-Effect Transistor, 0.4A I(D), 400V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Manufacturer: ON Semiconductor L.L.C.
Description: Power Field-Effect Transistor, 0.4A I(D), 400V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
NDT02N40T1G SPECIFICATIONS
| Mfr Package Description | HALOGEN FREE AND ROHS COMPLIANT,TO-261, CASE 318E-04, 4 PIN |
| REACH Compliant | Yes |
| EU RoHS Compliant | Yes |
| Status | Discontinued |
| Avalanche Energy Rating (Eas) | 120.0 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 0.4 A |
| Drain Current-Max (ID) | 0.4 A |
| Drain-source On Resistance-Max | 0.0055 ohm |
| DS Breakdown Voltage-Min | 400.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-261AA |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1.0 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.0 W |
| Pulsed Drain Current-Max (IDM) | 1.6 A |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Element Material | SILICON |
