Part #: NDS9956

Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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NDS9956 SPECIFICATIONS

Status Discontinued
Configuration SEPARATE, 2 ELEMENTS
Drain Current-Max (Abs) (ID) 3.5  A
Drain Current-Max (ID) 3.5  A
Drain-source On Resistance-Max 0.1  ohm
DS Breakdown Voltage-Min 20.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 2.0
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.0  W
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

NDS9956 FEATURED EQUIVALENT PARTS


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NDS9956AX Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Same Functionality Status: DISCONTINUED

Description:

Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NDS9947X Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Same Functionality Status: DISCONTINUED

Description:

Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NDS9953 Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Same Functionality Status: DISCONTINUED

Description:

Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NDS9410L Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Same Functionality Status: DISCONTINUED

Description:

Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET