Part #: NDS9943

Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
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NDS9943 SPECIFICATIONS

Status Discontinued
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 3.0  A
Drain Current-Max (ID) 3.0  A
Drain-source On Resistance-Max 0.125  ohm
DS Breakdown Voltage-Min 20.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2.0
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2.0  W
Pulsed Drain Current-Max (IDM) 10.0  A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100.0  ns
Turn-on Time-Max (ton) 35.0  ns