Part #: NDS9936

Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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NDS9936 SPECIFICATIONS

REACH Compliant Yes
Status Transferred
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 5.0  A
Drain Current-Max (ID) 5.0  A
Drain-source On Resistance-Max 0.05  ohm
DS Breakdown Voltage-Min 30.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2.0
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.0  W
Pulsed Drain Current-Max (IDM) 40.0  A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100.0  ns
Turn-on Time-Max (ton) 55.0  ns