Part #: NDS8926S62Z
Part Category: Transistors
Manufacturer: Fairchild Semiconductor
Description: Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Fairchild Semiconductor
Description: Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NDS8926S62Z SPECIFICATIONS
| Mfr Package Description | SOIC-8 |
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 5.5 A |
| Drain-source On Resistance-Max | 0.035 ohm |
| DS Breakdown Voltage-Min | 20.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2.0 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 20.0 A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
