Part #: NDS356P/D87Z

Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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NDS356P/D87Z SPECIFICATIONS

Status Discontinued
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 1.1  A
Drain-source On Resistance-Max 0.21  ohm
DS Breakdown Voltage-Min 20.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 0.46  W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature LOGIC LEVEL COMPATIBLE

NDS356P/D87Z FEATURED EQUIVALENT PARTS


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Status
NDS356P/S62Z Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Drop-In Replacement Status: DISCONTINUED

Description:

Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
NDS356P/L99Z Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Drop-In Replacement Status: DISCONTINUED

Description:

Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB