Part #: NDS356AP
Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Small Signal Field-Effect Transistor, 1.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Manufacturer: Texas Instruments High-Performance Analog
Description: Small Signal Field-Effect Transistor, 1.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
NDS356AP SPECIFICATIONS
| REACH Compliant | Yes |
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 1.1 A |
| Drain Current-Max (ID) | 1.1 A |
| Drain-source On Resistance-Max | 0.2 ohm |
| DS Breakdown Voltage-Min | 30.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e0 |
| Number of Elements | 1.0 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 0.46 W |
| Power Dissipation-Max (Abs) | 0.5 W |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
