Part #: NDS335N/S62Z

Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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NDS335N/S62Z SPECIFICATIONS

Status Discontinued
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 1.7  A
Drain-source On Resistance-Max 0.14  ohm
DS Breakdown Voltage-Min 20.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.46  W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature LOGIC LEVEL COMPATIBLE

NDS335N/S62Z FEATURED EQUIVALENT PARTS


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Status
NDS335N/L99Z Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Drop-In Replacement Status: DISCONTINUED

Description:

Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
NDS335N/D87Z Manufacturer: Texas Instruments High-Performance Analog Replacement Type: Drop-In Replacement Status: DISCONTINUED

Description:

Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB