Part #: NDP7051/J69Z

Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 64A I(D), 50V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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NDP7051/J69Z SPECIFICATIONS

Mfr Package Description TO-220, 3 PIN
Status Discontinued
Avalanche Energy Rating (Eas) 500.0  mJ
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 64.0  A
Drain-source On Resistance-Max 0.016  ohm
DS Breakdown Voltage-Min 50.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175.0  Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 130.0  W
Pulsed Drain Current-Max (IDM) 190.0  A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 230.0  ns
Turn-on Time-Max (ton) 230.0  ns