Part #: NDP610AE
Part Category: Transistors
Manufacturer: Fairchild Semiconductor
Description: Power Field-Effect Transistor, 26A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer: Fairchild Semiconductor
Description: Power Field-Effect Transistor, 26A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
NDP610AE SPECIFICATIONS
| Mfr Package Description | TO-220, 3 PIN |
| REACH Compliant | Yes |
| Status | Discontinued |
| Avalanche Energy Rating (Eas) | 250.0 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 26.0 A |
| Drain Current-Max (ID) | 26.0 A |
| Drain-source On Resistance-Max | 0.065 ohm |
| DS Breakdown Voltage-Min | 100.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Number of Elements | 1.0 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 100.0 W |
| Pulsed Drain Current-Max (IDM) | 104.0 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
