Part #: NDP606B
Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 42A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Find Equivalent Parts
Manufacturer: Texas Instruments High-Performance Analog
Description: Power Field-Effect Transistor, 42A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Find Equivalent Parts
NDP606B SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 42.0 A |
| Drain Current-Max (ID) | 42.0 A |
| Drain-source On Resistance-Max | 0.028 ohm |
| DS Breakdown Voltage-Min | 60.0 V |
| Feedback Cap-Max (Crss) | 400.0 pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Number of Elements | 1.0 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 100.0 W |
| Power Dissipation-Max (Abs) | 100.0 W |
| Pulsed Drain Current-Max (IDM) | 126.0 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 210.0 ns |
| Turn-on Time-Max (ton) | 320.0 ns |
NDP606B FEATURED EQUIVALENT PARTS
Click on an equivalent part number to view part details, or select up to 4 parts to compare side-by-side.
| Equivalent Part | Manufacturer | Replacement Type [?]
Replacement TypesDrop-In Replacement: Same function, same pinout, parametrically equivalent or better to the compared device. Same Functionality: Same function, but different pinout and parameters to the compared device. 
|
Status | ||
|---|---|---|---|---|---|
| NDD406B | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
| NDP406B | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDP506BE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 24A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDB705AEL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDB606AL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDP508BL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 17A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDB706AEL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 75A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDB606A | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDD406BL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
| NDP705AE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDP408BL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 10A I(D), 80V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDP510BEL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDB705BE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 70A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDB706BEL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDP505B | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 24A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDB605B | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDD506A | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 19A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
| NDP505AE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 26A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDP405AE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDU406AL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 |
|
| NDU506AL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 19A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 |
|
| NDP405BE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 12A I(D), 50V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDP706AE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 75A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDB605A | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDP505BE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 24A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDP706BE | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
| NDB606B | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 42A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDU406A | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 |
|
| NDB705A | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
| NDP510BL | Manufacturer: Texas Instruments High-Performance Analog | Replacement Type: Same Functionality | Status: DISCONTINUED |
Description:Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |