Part #: M5M4V4169TP-20
Part Category: Memory ICs
Manufacturer: Mitsubishi Electric & Electronics USA, Inc.
Description: Cache DRAM, 256KX16, 80ns, CMOS, PDSO68
Manufacturer: Mitsubishi Electric & Electronics USA, Inc.
Description: Cache DRAM, 256KX16, 80ns, CMOS, PDSO68
M5M4V4169TP-20 SPECIFICATIONS
Mfr Package Description | 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-70/68 |
Status | Discontinued |
Sub Category | DRAMs |
Access Mode | PAGE |
Access Time-Max | 80.0 ns |
I/O Type | COMMON |
JESD-30 Code | R-PDSO-G68 |
JESD-609 Code | e0 |
Memory Density | 4194304.0 bit |
Memory IC Type | CACHE DRAM |
Memory Width | 16 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 68 |
Number of Words | 262144.0 words |
Number of Words Code | 256K |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Min | 0.0 Cel |
Operating Temperature-Max | 70.0 Cel |
Organization | 256KX16 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP2 |
Package Equivalence Code | TSSOP68/70,.46 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE |
Qualification Status | Not Qualified |
Refresh Cycles | 1024.0 |
Seated Height-Max | 1.2 mm |
Self Refresh | YES |
Standby Current-Max | 0.005 Amp |
Supply Current-Max | 0.27 Amp |
Supply Voltage-Nom (Vsup) | 3.3 V |
Supply Voltage-Min (Vsup) | 3.0 V |
Supply Voltage-Max (Vsup) | 3.6 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Pitch | 0.65 mm |
Terminal Position | DUAL |
Length | 23.49 mm |
Width | 10.16 mm |
Additional Feature | RAS ONLY/AUTO/SELF REFRESH |