Part #: K6R1016C1D-EI100
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 64KX16, 10ns, CMOS, PBGA48
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 64KX16, 10ns, CMOS, PBGA48
K6R1016C1D-EI100 SPECIFICATIONS
| Mfr Package Description | 6 X 7 MM, 0.75 MM PITCH, TBGA-48 |
| REACH Compliant | Yes |
| Status | Discontinued |
| Access Time-Max | 10.0 ns |
| JESD-30 Code | R-PBGA-B48 |
| Memory Density | 1048576.0 bit |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Terminals | 48 |
| Number of Words | 65536.0 words |
| Number of Words Code | 64K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Min | -40.0 Cel |
| Operating Temperature-Max | 85.0 Cel |
| Organization | 64KX16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | VFBGA |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Seated Height-Max | 1.0 mm |
| Supply Voltage-Nom (Vsup) | 5.0 V |
| Supply Voltage-Min (Vsup) | 4.5 V |
| Supply Voltage-Max (Vsup) | 5.5 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.75 mm |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Length | 7.0 mm |
| Width | 6.0 mm |
