Part #: K6R1016C1C-FC120
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 64KX16, 12ns, CMOS, PBGA48
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 64KX16, 12ns, CMOS, PBGA48
K6R1016C1C-FC120 SPECIFICATIONS
REACH Compliant | Yes |
Status | Discontinued |
Sub Category | SRAMs |
Access Time-Max | 12.0 ns |
I/O Type | COMMON |
JESD-30 Code | R-PBGA-B48 |
Memory Density | 1048576.0 bit |
Memory IC Type | STANDARD SRAM |
Memory Width | 16 |
Moisture Sensitivity Level | 3 |
Number of Terminals | 48 |
Number of Words | 65536.0 words |
Number of Words Code | 64K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Min | 0.0 Cel |
Operating Temperature-Max | 70.0 Cel |
Organization | 64KX16 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | FBGA |
Package Equivalence Code | BGA48,6X8,30 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, FINE PITCH |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 240 |
Qualification Status | Not Qualified |
Standby Current-Max | 0.005 Amp |
Standby Voltage-Min | 4.5 V |
Supply Current-Max | 0.095 Amp |
Supply Voltage-Nom (Vsup) | 5.0 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Form | BALL |
Terminal Pitch | 0.75 mm |
Terminal Position | BOTTOM |