Part #: K6R1008V1D-KC08
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 128KX8, 8ns, CMOS, PDSO32
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 128KX8, 8ns, CMOS, PDSO32
K6R1008V1D-KC08 SPECIFICATIONS
EU RoHS Compliant | Yes |
Status | Discontinued |
Sub Category | SRAMs |
Access Time-Max | 8.0 ns |
I/O Type | COMMON |
JESD-30 Code | R-PDSO-J32 |
JESD-609 Code | e1 |
Memory Density | 1048576.0 bit |
Memory IC Type | STANDARD SRAM |
Memory Width | 8 |
Moisture Sensitivity Level | 3 |
Number of Terminals | 32 |
Number of Words | 131072.0 words |
Number of Words Code | 128K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Min | 0.0 Cel |
Operating Temperature-Max | 70.0 Cel |
Organization | 128KX8 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | SOJ |
Package Equivalence Code | SOJ32,.44 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 260 |
Qualification Status | Not Qualified |
Standby Current-Max | 0.005 Amp |
Standby Voltage-Min | 3.0 V |
Supply Current-Max | 0.08 Amp |
Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Finish | TIN SILVER COPPER |
Terminal Form | J BEND |
Terminal Pitch | 1.27 mm |
Terminal Position | DUAL |