Part #: K6F4016U6G-EF70
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 256KX16, 70ns, CMOS, PBGA48
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 256KX16, 70ns, CMOS, PBGA48
K6F4016U6G-EF70 SPECIFICATIONS
| Status | Discontinued |
| Sub Category | SRAMs |
| Access Time-Max | 70.0 ns |
| I/O Type | COMMON |
| JESD-30 Code | R-PBGA-B48 |
| JESD-609 Code | e0 |
| Memory Density | 4194304.0 bit |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 16 |
| Number of Terminals | 48 |
| Number of Words | 262144.0 words |
| Number of Words Code | 256K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Min | -40.0 Cel |
| Operating Temperature-Max | 85.0 Cel |
| Organization | 256KX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | FBGA |
| Package Equivalence Code | BGA48,6X8,30 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Qualification Status | Not Qualified |
| Standby Current-Max | 3.0E-6 Amp |
| Standby Voltage-Min | 1.5 V |
| Supply Current-Max | 0.022 Amp |
| Supply Voltage-Nom (Vsup) | 3.0 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 0.75 mm |
| Terminal Position | BOTTOM |
