Part #: K6F4008U2E-EF55
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 512KX8, 55ns, CMOS, PBGA36
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 512KX8, 55ns, CMOS, PBGA36
K6F4008U2E-EF55 SPECIFICATIONS
| Mfr Package Description | 6 X 7 MM, 0.75 MM PITCH, TBGA-48/36 |
| Status | Discontinued |
| Sub Category | SRAMs |
| Access Time-Max | 55.0 ns |
| I/O Type | COMMON |
| JESD-30 Code | R-PBGA-B36 |
| JESD-609 Code | e0 |
| Memory Density | 4194304.0 bit |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 8 |
| Number of Functions | 1 |
| Number of Terminals | 36 |
| Number of Words | 524288.0 words |
| Number of Words Code | 512K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Min | -40.0 Cel |
| Operating Temperature-Max | 85.0 Cel |
| Organization | 512KX8 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | VFBGA |
| Package Equivalence Code | BGA36,6X8,30 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Qualification Status | Not Qualified |
| Seated Height-Max | 1.0 mm |
| Standby Current-Max | 3.0E-6 Amp |
| Standby Voltage-Min | 1.5 V |
| Supply Current-Max | 0.015 Amp |
| Supply Voltage-Nom (Vsup) | 3.0 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Max (Vsup) | 3.3 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 0.75 mm |
| Terminal Position | BOTTOM |
| Length | 7.0 mm |
| Width | 6.0 mm |
