Part #: K6F3216U6M-EF550
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 2MX16, 55ns, CMOS, PBGA55
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 2MX16, 55ns, CMOS, PBGA55
K6F3216U6M-EF550 SPECIFICATIONS
| Mfr Package Description | 7.50 X 12 MM, 0.75 MM PITCH, TBGA-55 |
| Status | Discontinued |
| Access Time-Max | 55.0 ns |
| JESD-30 Code | R-PBGA-B55 |
| Memory Density | 3.3554432E7 bit |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Terminals | 55 |
| Number of Words | 2097152.0 words |
| Number of Words Code | 2M |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Min | -40.0 Cel |
| Operating Temperature-Max | 85.0 Cel |
| Organization | 2MX16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | VFBGA |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Qualification Status | Not Qualified |
| Seated Height-Max | 1.0 mm |
| Supply Voltage-Nom (Vsup) | 3.0 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Max (Vsup) | 3.3 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.75 mm |
| Terminal Position | BOTTOM |
| Length | 12.0 mm |
| Width | 7.5 mm |
