Part #: K6F1616U6M-EF70
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
Manufacturer: Samsung Semiconductor Division
Description: Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
K6F1616U6M-EF70 SPECIFICATIONS
Mfr Package Description | 9 X 12 MM, 0.75 MM PITCH, TBGA-48 |
Status | Discontinued |
Access Time-Max | 70.0 ns |
JESD-30 Code | R-PBGA-B48 |
Memory Density | 1.6777216E7 bit |
Memory IC Type | STANDARD SRAM |
Memory Width | 16 |
Number of Functions | 1 |
Number of Terminals | 48 |
Number of Words | 1048576.0 words |
Number of Words Code | 1M |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Min | -40.0 Cel |
Operating Temperature-Max | 85.0 Cel |
Organization | 1MX16 |
Package Body Material | PLASTIC/EPOXY |
Package Code | VFBGA |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL |
Qualification Status | Not Qualified |
Seated Height-Max | 1.0 mm |
Supply Voltage-Nom (Vsup) | 3.0 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Max (Vsup) | 3.3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Form | BALL |
Terminal Pitch | 0.75 mm |
Terminal Position | BOTTOM |
Length | 12.0 mm |
Width | 9.0 mm |