Part #: K4J52324QE-BC14

Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: DDR3 DRAM, 16MX32, CMOS, PBGA136
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K4J52324QE-BC14 SPECIFICATIONS

Mfr Package Description FBGA-136
EU RoHS Compliant Yes
Status Discontinued
Access Mode MULTI BANK PAGE BURST
JESD-30 Code R-PBGA-B136
JESD-609 Code e1
Memory Density 5.36870912E8  bit
Memory IC Type DDR3 DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 136
Number of Words 1.6777216E7  words
Number of Words Code 16M
Operating Mode SYNCHRONOUS
Operating Temperature-Min 0.0  Cel
Operating Temperature-Max 85.0  Cel
Organization 16MX32
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2  mm
Self Refresh YES
Supply Voltage-Nom (Vsup) 1.8  V
Supply Voltage-Min (Vsup) 1.7  V
Supply Voltage-Max (Vsup) 1.9  V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8  mm
Terminal Position BOTTOM
Length 14.0  mm
Width 11.0  mm
Additional Feature AUTO/SELF REFRESH