Part #: K4H511638B-ZCCC0
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: DDR1 DRAM, 32MX16, 0.65ns, CMOS, PBGA60
Manufacturer: Samsung Semiconductor Division
Description: DDR1 DRAM, 32MX16, 0.65ns, CMOS, PBGA60
K4H511638B-ZCCC0 SPECIFICATIONS
| Mfr Package Description | ROHS COMPLIANT, FBGA-60 |
| REACH Compliant | Yes |
| EU RoHS Compliant | Yes |
| China RoHS Compliant | Yes |
| Status | Discontinued |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max | 0.65 ns |
| JESD-30 Code | R-PBGA-B60 |
| JESD-609 Code | e1 |
| Memory Density | 5.36870912E8 bit |
| Memory IC Type | DDR1 DRAM |
| Memory Width | 16 |
| Moisture Sensitivity Level | 2 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 60 |
| Number of Words | 3.3554432E7 words |
| Number of Words Code | 32M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Min | 0.0 Cel |
| Operating Temperature-Max | 70.0 Cel |
| Organization | 32MX16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TBGA |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE |
| Qualification Status | Not Qualified |
| Seated Height-Max | 1.2 mm |
| Self Refresh | YES |
| Supply Voltage-Nom (Vsup) | 2.6 V |
| Supply Voltage-Min (Vsup) | 2.5 V |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Form | BALL |
| Terminal Pitch | 1.0 mm |
| Terminal Position | BOTTOM |
| Length | 12.0 mm |
| Width | 10.0 mm |
| Additional Feature | AUTO/SELF REFRESH |
