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Part #: BL2N50D
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 2A I(D), 500V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
BL2N50D SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | TUBE: 80 |
| Avalanche Energy Rating (Eas) (mJ) | 20.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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