Part #: 3N205

Part Category: Transistors
Manufacturer: Texas Instruments High-Performance Analog
Description: RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72
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3N205 SPECIFICATIONS

Status Discontinued
Case Connection SOURCE AND SUBSTRATE
Configuration SINGLE
Drain Current-Max (Abs) (ID) 0.05  A
Drain Current-Max (ID) 0.05  A
DS Breakdown Voltage-Min 25.0  V
Feedback Cap-Max (Crss) 0.03  pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-72
JESD-30 Code O-MBCY-W4
Number of Elements 1.0
Number of Terminals 4
Operating Mode DUAL GATE, DEPLETION MODE
Operating Temperature-Max 200.0  Cel
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.36  W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON